Photoluminescence characteristics of Mg-and Si-doped GaN thin films grown by MOCVD technique,” J. The current results can impact the performances of several nitride-based devices, such as laser diodes, LEDs, solar cells, and photodetectors. The atomic force microscopy height retraces of p-SB films show device quality surface morphology, with root mean square roughness ranging from 2.53 to 4.84 nm. These heavily doped p-SB templates have comparable material qualities to that of GaN. The p-SB with the In content of ∼15.2% is estimated to have an activation energy of 29 meV. Temperature dependent Hall measurements were conducted to estimate the activation energy of the p-SB template. cm and 0.48 cm 2/V s for p-SB with an In content of 15.2%.The resistivity and mobility of the templates decreased gradually from 3.13 Ω When compared to optimized bulk p-GaN, the hole concentration in p-SB with an In content of ∼15.2% increased by two orders of magnitude from 5.22 × 10 17 to 5.28 × 10 19 cm −3.
Using the semibulk approach, p-In xGa 1−xN semibulk (p-SB) templates were grown with an indium content ranging from 2.4% to 15.2% via metalorganic chemical vapor deposition.
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